S. Babiker and Rania Naeem, “Noise suppression in single electron transistor”, submitted for publication in (Journal) IEEE Trans. on Nanotechnology, August 2012.
[2] S. Babiker, “Shot Noise in Resistively Coupled Single Tunnel Junctions”, submitted for publication in (Journal) Solid State Electronics, August 2012.
[3] S. Babiker, Alaeldin A. Ahmed and Mustafa A. A. Yasin, “Web Navigation Tool for Visually Impaired People”, International Journal of Information Technology and Web Engineering (IJITWE), 7(1), 33-47, 2012 33. ISSN 1554-1045, DOI: 10.4018/jitwe.2012010103.
[4] S. Babiker, “Shot Noise in Single Electron Tunnelling Systems: a Semi-classical Model”, (Journal) IEEE Transactions on Nanotechnology, 10 (5), pp. 1191-95, 2011.
[5] S. Babiker, Rania Naeem and A. Bedri, “Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits”,International Journal of Electronics and Electrical Engineering vol.6, pp. 1485-1489, 2011.
[6] S. Babikir, Liena Elrayah Abdel-Khair, Samah Makawi Elbasheer, “Microcontroller based Heart Rate Monitor using Fingertip Sensors”, Engineering Journal, vol 2, 2012.
[7] S. Babiker, “Simulation of single electron transport in quantum dots”, (Journal) IEEE Trans. Electron Devices, 52(3), pp. 392-396, 2005.
[8] S. Babiker, A. Asenov, S. Roy, S. P. Beaumont, “Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study”, 1999, Solid State Electronics Journal, 43, pp. 1281-8.
[9] S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont and J. R. Barker, “Complete RF analysis of compound FETs based on transient Monte-Carlo simulation”, Journal of VLSI Design, 1998.
[10] S. Roy, A. Asenov, S. Babiker, J. R. Barker and S. P. Beaumont “RF performance of Gi/SiGe MODFETs: A simulation study”, Journal of VLSI Design, 1998.
[11] A.Asenov, S. Babiker, S. P. Beaumont and J. R. Barker, “Monte-Carlo calibrated drift-diffusion simulation of short channel HFETs”, Journal of VLSI Design, 1998.
[12] S. Babikir, A. Asenov, J. R. Barker & S. P. Beaumont, “Quadrilateral Finite Element Monte Carlo simulation of complex shape compound FETS”, Journal of VLSI Design, 1998, Vol. 6, Nos. (1-4), pp. 127—130.
[13] S. Babiker, A. Asenov, N. Cameron, S. P. Beaumont and J. R. Barker, “Complete Monte-Carlo RF analysis of ‘real’ compound FETs”, (Journal) IEEE Transactions on Electron Devices, 1997.
[14] S. Roy, A. Asenov, S. Babiker, J. R. Barker and S. P. Beaumont, “Monte-Carlo analysis of Si/SiGe MODFET RF performance potential”, presented at theHot Electron Conference, Germany, 1997 proceedings published in (Journal) Physica Status Solidi B – Basic Research 204: 1, pp. 525-527, 1997.
[15] N. A. Elagib, S. F. Babiker and S. H. Alvi, “New Empirical Models for Global Solar Radiation over Bahrain”, Journal of Energy Conversion and Management, Vol. 39(8), pp. 827-835, 1997.
[16] J.R. Barker, S. Babiker and S. Roy, “Single Electron Transport in Nanostructure Systems”, (Journal) Physica B: Condensed Matter, Vol. 227(1-4), pp. 87-91, 1996.
[17] A.Asenov, S. Babiker, N. Cameron, S. Murad, M. Holland and S. P. Beaumont, “Basics of pseudomorphic HEMTs technology and numerical simulation”, NATO ASI series, in “Devices Based on Low Dimensional Semiconductor Structures“, eds. M. Balkanski, Kluwer Academic Publishers, 1996.
[18] S. Babiker, A. Asenov, J. R. Barker, and S. P. Beaumont, “Finite-Element Monte-Carlo Simulation of recess gate compound FETs”, Solid State Electronics Journal, Vol 93 No. 5, pp. 629-635,1996.
[19] S. Babiker, N. Cameron, A. Asenov and S. P. Beaumont, “New Evidence for Velocity Overshoot in a 200nm pseudomorphic HEMT”, Microelectronics Journal, 27(8), pp. 785-793, 1996.
[20] S. Babiker, A. Asenov, N. Cameron and S. P. Beaumont, “A simple approach to include external resistances in the Monte-Carlo simulation of MESFETs and HEMTs”, (Journal) IEEE Transactions on Electron Devices, Vol. 43 (11), pp. 2032-2034, 1996.
[21] A.Asenov, S. Babiker, N. Cameron and S. P. Beaumont, “Design of properly scaled 100nm pseudomorphic HEMT”, (Journal) IEE Colloquium on Terahertz Technology Digest, Ref. No. 1995/229, 2/1-2/6, 1995.
[22] A.Asenov, S. Babiker, N. Cameron, S. Beaumont, “Simulation of geometry and surface effects in short gate length MESFETs and HEMTs”, (Journal) IEE Coll on Terahertz Technology, pp. 2/1-2/6, 1995.
[23] J.R.Barker & S. Babiker, “Quantum Traffic Theory Of Single Electron Transport”, In Nanostructures in Quantum transport in ultrasmall devices, ed D K Ferry, Plenum Press 217-226 (1995).
[24] J.R. Barker, A. Asenov, A. Brown, J. Cluckie, S. Babiker and C. Atrokianathan, “Parallel simulation of semiconductor devices”, in “Massively Parallel Processing, Applications and Development“, Eds. L. Dekker, W. Smith, J. Zuidervaart, Elseveir, pp. 683-690, 1994.
[25] J. R. Barker, S. Roy, S. Babiker, “Trajectory representations, fluctuations and stability of single-electronic systems”, Chapter (22) in “Science and Technology of Mesoscopic Structures“, eds. S. Namba, C. Hamaguchi and T. Ando, Springler Verlag, Tokyo and New York, 1992.
